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Modeling diode reverse recovery and corresponding implementation in fast time-domain simulation

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4 Author(s)
Hao Wang ; School of Electrical Engineering, Xi¿an Jiaotong University, CHINA ; Jinjun Liu ; Runxin Wang ; Qinsan Hou

Existing power diode models in most time-domain circuit simulators cannot accurately present the reverse recovery characteristics of actual diode devices with fast simulation speed. Ma-Lauritzen model is a relatively simple solution for modeling the reverse recovery of diode with reasonable accuracy but so far little result has been reported on the methodology and process for applications in circuit simulators. Based on Ma-Lauritzen model, this paper proposes a configuration and implementation methodology for building diode models with reverse recovery characteristics in an ordinary time-domain circuit simulator like SIMPLIS. A silicon power diode 8ETX06 is selected for simulation speed and accuracy evaluation regarding the proposed modeling methodology and implementation approach. Furthermore, simulation and hardware test results on a switching power converter are shown to verify that the diode model following the proposed building method is reasonably accurate and fast in dynamic waveform emulation and component stress estimation for the reverse recovery process.

Published in:

2007 7th Internatonal Conference on Power Electronics

Date of Conference:

22-26 Oct. 2007