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A fully depleted lean-channel transistor (DELTA)-a novel vertical ultrathin SOI MOSFET

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4 Author(s)
Hisamoto, D. ; Hitachi Ltd., Tokyo, Japan ; Kaga, T. ; Kawamoto, Y. ; Takeda, E.

A fully depleted lean-channel transistor (DELTA) that has a gate with a vertical ultrathin SOI structure is reported. In the deep submicrometer region, selective oxidation is useful in realizing SOI isolation. It provides high crystalline quality, as good as that of conventional bulk single-crystal devices. Using experiments and three-dimensional simulation, it was shown that the gate structure has effective channel controllability and its vertical ultrathin SOI structure provides superior device characteristics.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 1 )

Date of Publication:

Jan. 1990

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