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High-gain, V-band, low-noise MMIC amplifiers using pseudomorphic MODFETs

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8 Author(s)
G. M. Metze ; Commun. Satellite Corp., Clarksburg, MD, USA ; J. F. Bass ; T. T. Lee ; A. B. Cornfeld
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State-of-the-art, 60-GHz, low-noise MMICs based on pseudomorphic modulation-doped FETs, with 0.25- mu m*60- mu m gates offset 0.3 mu m from the source ohmic, are discussed. Single-state low-noise amplifiers (LNAs) exhibited minimum noise figures of 2.90 dB with 4.1 dB of associated gain at 59.25 GHz. Dual-state MMICs had minimum noise figures of 3.5 dB and 10.8 dB of associated gain at 58.50 GHz. Cascaded four-stage LNAs (two dual-stage MMICs) had minimum noise figures of 3.7 dB and over 20.7 dB of associated gain at 58.0 GHz. Finally, when biased for maximum gain, the four-stage amplifier exhibited over 30.4 dB of gain at 60.0 GHz.<>

Published in:

IEEE Electron Device Letters  (Volume:11 ,  Issue: 1 )