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MOSFET degradation due to hot-carrier effect at high frequencies

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3 Author(s)
Subrahmaniam, R. ; Boeing Aerosp. & Electron., Seattle, WA, USA ; Chen, J.Y. ; Johnston, A.H.

Hot-carrier-induced degradation due to AC stress on short-channel MOSFETs is discussed. It is observed that pulsed gate voltage stressing with a short falltime (0.7 ns) can cause additional lifetime degradation in the form of drain-current reduction. The AC-enhanced degradation is more pronounced at higher frequencies.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 1 )