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Bipolar transistor fabrication using selective epitaxial growth of P- and B-doped layers in gas-source Si molecular beam epitaxy

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3 Author(s)
Hirayama, Hiroyuki ; NEC Corp., Kawasaki, Japan ; Koyama, Kazuhisa ; Tatsumi, T.

Si n-p-n bipolar transistor fabrication using selective epitaxial growth in disilane gas-source Si molecular beam epitaxy (Si-MBE) is discussed. Selective growth of B-doped and P-doped Si was used for the base- and emitter-layer formation, respectively. The growth temperature was 600 degrees C. No ion-implantation process was used. The base ohmic contact was formed using Al selective chemical vapor deposition. The fabricated transistor showed normal emitter-base and base-collector I-V characteristics. The common-emitter characteristics revealed a maximum current gain of 30.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 1 )