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Ultrahigh temperature and ultrahigh speed operation of 1.3 μm strain-compensated AlGaInAs/InP uncooled laser diodes

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3 Author(s)
Wang, M.C. ; Photonic Technol. Res., Minist. of Transp. & Commun., Tuoyan ; Lin, W. ; Tu, Y.K.

High performance 1.3 μm uncooled lasers with excellent high temperature and high speed characteristics are reported. A CW characteristic temperature of 105 K between 25 and 85°C, a maximum CW operating temperature above 170°C, and an intrinsic 3 dB modulation bandwidths estimated at ⩾23 GHz at 25°C and 15 GHz at 85°C, have been achieved. These values are among the best obtained for 1.3 μm AlGaInAs laser devices

Published in:

Electronics Letters  (Volume:31 ,  Issue: 18 )