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Monolithic photovoltaic PbS-on-Si infrared-sensor array

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5 Author(s)
Masek, J. ; AFIF, Swiss Federal Inst. of Technol., Zurich, Switzerland ; Ishida, A. ; Zogg, Hans ; Maissen, C.
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The growth of epitaxial narrow-gap PbS-on-Si substrates using a stacked CaF/sub 2/-BaF/sub 2/ intermediate buffer layer and the fabrication of linear arrays of photovoltaic infrared (IR) sensors in the PbS layer are discussed. The sensors of the array exhibit resistance-area products at zero bias of 3 Omega -cm/sup 2/ at 200 K (3.4- mu m cutoff wavelength) and 2*10/sup 5/ Omega -cm/sup 2/ at 84 K (4- mu m cutoff), with corresponding detectivities of 2*10/sup 10/ and 1*10/sup 13/ cm- square root Hz/W, respectively.<>

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Electron Device Letters, IEEE  (Volume:11 ,  Issue: 1 )