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Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications

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4 Author(s)
Reza Abdolvand ; School of Electrical and Computer Engineering, Oklahoma State University, OK, USA ; Hossein M. Lavasani ; Gavin K. Ho ; Farrokh Ayazi

This paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators. Low-motional impedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array. Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed. Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient. The lowest reported power consumption is ~350 muW for an oscillator operating at ~106 MHz. A passive temperature compensation method is also utilized bThis paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators. Low-motionalimpedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array. Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed. Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient. The lowest reported power consumption is ~350 muW for an oscillator operating at ~106 MHz. A passive temperature compensation method is also utilized by including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-2.4 ppm/degC) temperature coefficient of frequency is obtained for an 82-MHz oscillator.y including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-2.4 ppm/degC) temperature coefficient of frequency is obtained for an 82-M- z oscillator.

Published in:

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control  (Volume:55 ,  Issue: 12 )