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Rapid thermal chemical vapor deposited oxides on N-type 6H-silicon carbide

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5 Author(s)
Sridevan, S. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Misra, V. ; McLarty, P.K. ; Baliga, B.J.
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The electrical characteristics of oxides deposited on nitrogen doped N-type 6H-silicon carbide using rapid thermal chemical vapor deposition are reported. The gases used in the deposition process were silane (diluted with argon), and nitrous oxide. The oxide was found to have an interface state density of 7/spl times/10/sup 11/ cm/sup -2/eV/sup -1/ and a low effective charge density of 1.1/spl times/10/sup 11/ cm/sup -2/. The deposited oxide is compared with oxide grown thermally on N-type 6H-silicon carbide by wet oxidation. The quality of the deposited oxide is found to be comparable to the quality of the thermal oxide. An excellent low thermal budget process to obtain good oxides on N-type 6H-silicon carbide has thus been demonstrated for the first time.<>

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 11 )

Date of Publication:

Nov. 1995

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