Referenced Items are not available for this document.
The NH/sub 3/ plasma passivation has been performed for the first time on the polycrystalline silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH/sub 3/ plasma passivation achieve better device performances, including the off-current below 0.1 pA//spl mu/m and the on/off current ratio higher than 10/sup 8/, and also better hot-carrier reliability as well as thermal stability than the H/sub 2/-plasma devices. These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiO/sub 2//poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films.<
Published in:
Electron Device Letters, IEEE
(Volume:16
,
Issue:
11
)
Date of Publication: Nov. 1995
- Page(s):
- 503 - 505
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5109350
- Digital Object Identifier :
- 10.1109/55.468281
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1995
- Sponsored by :
- IEEE Electron Devices Society
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