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The effects of NH3 plasma passivation on polysilicon thin-film transistors

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3 Author(s)
Fang-Shing Wang ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Meng-Jin Tsai ; Huang-Chung Cheng

The NH3 plasma passivation has been performed for the first time on the polycrystalline silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH3 plasma passivation achieve better device performances, including the off-current below 0.1 pA/μm and the on/off current ratio higher than 10/sup 8/, and also better hot-carrier reliability as well as thermal stability than the H2-plasma devices. These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiO2/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films.

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 11 )