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A novel method to characterize parasitic capacitances in MOSFET's

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3 Author(s)
B. Ricco ; Dept. of Electron., Bologna Univ., Italy ; R. Versari ; D. Esseni

A new technique exploiting the body effect is presented to separate intrinsic from extrinsic capacitances in submicron MOSFET's. The method has been validated using 2D numerical simulations and results obtained with transistors fabricated with 0.7 μm CMOS technology are presented.

Published in:

IEEE Electron Device Letters  (Volume:16 ,  Issue: 11 )