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High-Current–High-Speed Dynamic Bias Control System Applied to a 100-W Wideband Push–Pull Amplifier

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9 Author(s)
Bacque, L. ; Genie Electr. et Inf. Ind. (GEII),, Inst. Univ. de Technol. (IUT), Brive-la-Gaillarde ; Bouysse, P. ; Rebernak, W. ; Poumier, C.
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This paper presents a dynamic bias control system applied to a high power wideband amplifier. The amplifier used is based on a push-pull topology with LDMOS transistors and works in the 50-500 MHz frequency bandwidth. It delivers a nominal 100 W output power with 60% power-added efficiency (PAE) when it is fed with continuous signals. When it is driven by a 16QAM modulated signal, 6 dB input power back-off is necessary to keep an error vector measurement below 5%. This usual back-off technique results in lower PAE (43% in our case). By implementing the proposed bias control system, both 55% PAE and 5% EVM have been reached for 75 W average output power. The drain bias control circuit handles high currents and high voltages (7 A-28 V). The proposed implementation makes use of a class S modulator driven by a SigmaDelta modulator. Up to 1 Mbit/s envelope bit rate can be efficiently and accurately processed by using here dedicated circuits running at 20 MHz clock frequency.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:56 ,  Issue: 12 )

Date of Publication:

Dec. 2008

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