By Topic

N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Petry, J. ; NXP-TSMC Res. Center, Leuven ; Boccardi, G. ; Xiong, K. ; Muller, M.
more authors

In the framework of fully depleted devices, we report up to 150 mV VT tuning towards the Si conduction band by implantation of Te into molybdenum capped with TiN, the dielectric being HfO2. Moderate post implant anneal seems to have no effect on the VT shift while high temperature anneal is needed to shift the EWF significantly. The temperature applied to the devices during the entire process is therefore crucial for driving the implanted species towards the Mo/high-k interface, where they can modify the interface dipole and hence modify the effective workfunction. Hence, high temperature standard pike anneal is a very interesting option. The effective workfunction shifts linearly with the dose. Moreover, the higher the implant energy, the larger the effect of the dose on the effective workfunction. Up to 10 keV, the device integrity is preserved after ion implantation. At higher energies, implanted ions penetrate into the high-k, which leads to Dit and subthreshold slope degradation. However, there is no evidence of counterdoping in this later case and gate leakage is hardly increased.

Published in:

Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European

Date of Conference:

15-19 Sept. 2008