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Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

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11 Author(s)
Matsukawa, T. ; Nanoelectron. Res. Inst., Tsukuba ; Endo, K. ; Yongxun Liu ; O'uchi, S.
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Dual metal gate CMOS FinFETs have been integrated successfully by the Ta/Mo interdiffusion technology. For the first time, low-Vt CMOS FinFETs representing on-current enhancement and high-Vt CMOS FinFETs reducing stand-by power dramatically, namely multi-Vt CMOS FinFETs, are demonstrated by selecting Ta/Mo gates for n or pMOS FinFETs with non-doped fin channels. The dual metal gate FinFET SRAM with a low-Vt configuration is demonstrated with excellent noise margins at a reduced supply voltage.

Published in:

Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European

Date of Conference:

15-19 Sept. 2008