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Monolithic integration of CMOS VLSI and CNT for hybrid nanotechnology applications

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6 Author(s)
Deji Akinwande ; Department of Electrical Engineering and Center for Integrated Systems, Stanford University, CA 94305, USA ; Shinichi Yasuda ; Bipul Paul ; Shinobu Fujita
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We integrate carbon nanotube (CNT) fabrication with commercial CMOS VLSI fabrication on a single substrate suitable for emerging hybrid nanotechnology applications. This co-integration combines the inherent advantages of CMOS and CNTs. These emerging applications include CNT optical, biological, chemical, and gas sensors that require complex CMOS electronics for sensor control, calibration, and signal processing of sensor output. We demonstrate the successful co-integration on a single chip with a vehicle circuit; a two transistor cascode megahertz amplifier utilizing both silicon nMOS and CNT transistors.

Published in:

ESSDERC 2008 - 38th European Solid-State Device Research Conference

Date of Conference:

15-19 Sept. 2008