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New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate

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8 Author(s)
G. Guegan ; CEA-LETI Minatec, 17, rue des Martyrs, 38054 Grenoble Cedex 9, France ; R. Gwoziecki ; P. Touret ; C. Raynaud
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A detailed analysis of the body potential impact on the performance enhancement of BC pMOSFET when the body is not contacted, is reported in this paper. Investigations on floating-body device behavior reveal that these new floating body effect leads to pMOSFET drive capability increase with lower subthreshold slope, no Ioff degradation and no kink effect. The body potential is mainly governed by the ECB component between the partial n+ poly-gate and n type silicon substrate through the 1.6 nm thin gate oxide. Static characterizations of various layouts and geometries demonstrate that narrow pMOSFET and H gate design provide the highest Ion gain due to higher body potential. Furthermore, it has been found that the largest n+ poly gate area results in the fastest switch-on Id transients.

Published in:

ESSDERC 2008 - 38th European Solid-State Device Research Conference

Date of Conference:

15-19 Sept. 2008