By Topic

Fabrication of radiation detector using PbI2 crystal

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
T. Shoji ; Tohoku Inst. of Technol., Sendai, Japan ; K. Ohba ; T. Suehiro ; Y. Hiratate

Radiation detectors have been fabricated from lead iodide (PbI2) crystals grown by two methods: zone melting and Bridgman methods. In response characteristics of the detector fabricated from crystals grown by the zone melting method, a photopeak for γ-rays from an 241Am source (59.5 keV) has been clearly observed with applied detector bias of 500 V at room temperature. The hole drift mobility is estimated to be about 5.5 cm2/Vs from measurement of pulse rise time for 5.48 MeV α-rays from 241 Am. By comparing the detector bias versus saturated peak position of the PbI2 detector with that of the CdTe detector, the average energy for producing electron-hole pairs is estimated to be about 8.4 eV for the PbI2 crystal. A radiation detector fabricated from PbI2 crystals grown by the Bridgman method, however, exhibited no response for γ-rays

Published in:

IEEE Transactions on Nuclear Science  (Volume:42 ,  Issue: 4 )