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Properties of melt-grown ZnSe solid-state radiation detectors

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2 Author(s)
Eissler, E.E. ; eV Products, Saxonburg, PA, USA ; Lynn, K.G.

Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10×10×2 mm3 Sputtered platinum and gold contacts were applied to polished detector blanks. Voltage versus current characteristics were determined for the devices at 25°C. Pulse height spectra were obtained using 241Am and 109Cd at both 25°C and 150°C with applied bias of 9000 V/cm. Current versus temperature was measured over the temperature range of 30°C to 150°C. Performance was measured at energies of 22.1 and 59.5 keV over a temperature range of -70°C to 170°C. Current versus dose rate was measured with 662 keV gamma irradiation. A value of the Mobility-Lifetime product (μτ) for electrons was estimated. Time and temperature dependence of photo-peak position using Pulse Height Analysis (PHA) was studied

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Nuclear Science, IEEE Transactions on  (Volume:42 ,  Issue: 4 )