By Topic

Low Noise-Figure {\rm P}^{+} AA Mesh Inductors for CMOS UWB RFIC Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Chi-Chen Chen ; Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli ; Jen-How Lee ; Yo-Sheng Lin ; Chang-Zhi Chen
more authors

In this paper, we demonstrate that the noise figure (NF) of a P+ active-area (AA) mesh inductor is much better than that of its standard version. In a P+AA mesh inductor, the AA with P+ implantation is added beneath it in the shape of a mesh to reduce its capacitive and magnetic coupling with the silicon substrate. Two 3.1-10.6-GHz CMOS ultrawideband (UWB) low-noise amplifiers (LNAs), one with P+ AA mesh inductors (AA mesh UWB LNA) and the other with standard inductors (STD UWB LNA), are implemented to study the effect of the P+ AA mesh on their performances. The results show that a 0.62-dB improvement in NF (from 0.8 to 0.18 dB) was achieved at 10.5 GHz for the input inductor LG1 if the P+ AA mesh had been added beneath it. In addition, the AA mesh UWB LNA achieved a low and flat NF of 3.365 plusmn 0.225 dB over the band of interest, notably better than that (4.64 plusmn 0.52 dB) of the STD UWB LNA.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 12 )