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Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications

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12 Author(s)
Thijs, S. ; Interuniv. Microelectron. Center, Leuven ; Tremouilles, D. ; Russ, C. ; Griffoni, A.
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Electrostatic discharge performance of advanced FinFETs shows a delicate sensitivity to device layout and to processing parameters. Both N- and P-type MOS FinFET devices are characterized in bipolar operation mode as a function of layout parameters such as gate length and fin width. The impact of well implants, selective epitaxial growth, and strain is studied.

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Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 12 )