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We present a theoretical model for the description of carrier and light dynamics in a quantum dot semiconductor optical amplifier that includes the inhomogeneous broadening of the quantum dots (QDs) via a spatially resolved statistical approach. The model is based on Maxwell-Bloch equations and takes into account the scattering of charge carriers between 2-D wetting layer states and bound quantum dot states, the amplification, and the wave-guiding of the light fields in the optical cavity. Simulations allow the analysis of the occupation probability of the quantum dot levels at steady state and during optical excitation by a femtosecond pulse. The influence of homogeneously and inhomogeneously broadened quantum dot media on spatial and spectral hole burning is revealed and discussed. It is shown that spatially varying dot properties lead to the reshaping of the optical pulse in the active medium.