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Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs

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4 Author(s)
Dey, A. ; Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai ; Chakravorty, A. ; DasGupta, N. ; DasGupta, A.

In this paper, analytical models of subthreshold current and slope for asymmetric four-terminal double-gate (DG) MOSFETs are presented. The models are used to study the subthreshold characteristics with asymmetry in gate oxide thickness, gate material work function, and gate voltage. A model for the subthreshold behavior of three-terminal DG MOSFETs is also presented. The results of the models show excellent match with simulations using MEDICI. The analytical models provide physical insight which is helpful for device design.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 12 )

Date of Publication:

Dec. 2008

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