By Topic

Degraded off-State Current of Organic Thin-Film Transistor and Annealing Effect

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sunghun Hong ; Sch. of Electron. & Electr. Eng., Hongik Univ., Seoul ; Jongsun Choi ; Youngmin Kim

We report a significant increase in the off-state leakage current (I OFF) of an organic thin-film transistor with polystyrene (PS) gate dielectric following air exposure. The increased I OFF was found to be caused by the degradation of the PS insulation property. The gate leakage current continuously increased, following air exposure for four weeks. Interestingly, the gate leakage current was reduced after the degraded device underwent annealing at 70degC which is lower than the PS glass temperature. The change in the gate leakage is well correlated with V FB shift observed in both the air exposure and the following anneal. Based on the observation, we believe that the enhancement of the leakage is likely attributed to the trap generation inside the PS layer.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 12 )