Characteristics of $\hbox{HfO}_{2}$ /Poly-Si Interfacial Layer on CMOS LTPS-TFTs With $\hbox{HfO}_{2}$ Gate Dielectric and $\hbox{O}_{2}$ Plasma Surface Treatment

In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO
₂
gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO
₂
/poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO
₂
LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO
₂
gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.