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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:55 Issue:12 Help

Enhancement of Data Retention Time for 512-Mb DRAMs Using High-Pressure Deuterium Annealing

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2 Author(s)
Hyo Sik Chang ; Korea Inst. of Ceramic Eng. & Technol., Icheon ; Hyunsang Hwang

We have investigated the effect of high-pressure deuterium annealing (HPDA) for retention time improvement of 512-Mb dynamic random access memories with 3D cell transistors. Compared with a control sample annealed in a conventional forming gas (4% H2/N2), additional annealing in a high-pressure deuterium ambient (100% D2) at 400degC for 30 min improved the data retention time. This improvement can be explained by the decrease of junction leakage currents due to D2 incorporation at the SiO2/Si interface near trench isolation region. In addition, HPDA introduced during postmetal anneal exhibited improved hot carrier reliability.

Published in:
Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 12 )

Date of Publication: Dec. 2008

Page(s):
3599 - 3601
ISSN :
0018-9383
INSPEC Accession Number:
10324367
Digital Object Identifier :
10.1109/TED.2008.2006536
Date of Current Version :
21 November 2008
Issue Date :
Dec. 2008
Sponsored by :
IEEE Electron Devices Society

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