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We have investigated the effect of high-pressure deuterium annealing (HPDA) for retention time improvement of 512-Mb dynamic random access memories with 3D cell transistors. Compared with a control sample annealed in a conventional forming gas (4% H2/N2), additional annealing in a high-pressure deuterium ambient (100% D2) at 400degC for 30 min improved the data retention time. This improvement can be explained by the decrease of junction leakage currents due to D2 incorporation at the SiO2/Si interface near trench isolation region. In addition, HPDA introduced during postmetal anneal exhibited improved hot carrier reliability.
Date of Publication: Dec. 2008