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Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

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6 Author(s)
Bingfeng Fan ; State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou ; Hao Wu ; Yu Zhao ; Yulun Xian
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This paper presents a chip-level thermal study of high-power nitride-based flip-chip (FC) light-emitting diodes (LEDs). In order to understand the thermal performance of the high-power FC LEDs thoroughly, a quantitative parametric analysis of the thermal dependence on the chip contact area, bump configuration, and bump defects was performed by finite-element model (FEM) numerical simulation and thermal infrared (IR) microscopy testing, respectively. FEM numerical simulation results proved that the optimized bump configuration design was essential to get a uniform temperature distribution in the active layer and improve the thermal performance of the FC LED. IR microscopy testing results recognized that bump defects formed in the LED chip solder processing would lead to surface hot spots around the vicinity of these bump defects, particularly under high-current working conditions. In addition, a light-emitting dark zone was also observed in the optical field for FC LEDs with bump defects. In summary, optimized LED FC bump configuration design and good bonding quality in the chip bonding process are proved to be critical for improving the thermal performance and extending the operating longevity of high-power FC LEDs.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 12 )