By Topic

Novel TCAD-Oriented Definition of the off-State Breakdown Voltage in Schottky-Gate FETs: A 4H–SiC MESFET Case Study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Mauro Furno ; Dipt. di Elettron., Politec. di Torino, Torino ; Fabrizio Bonani ; Giovanni Ghione

Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD). off-state breakdown threshold criteria based on the magnitude of the Schottky-barrier leakage current can be directly applied to TCAD; however, the results obtained are not accurate due to the large uncertainty in the Schottky-barrier parameters and models arising above all in advanced wide-gap semiconductors and to the need of performing high-temperature simulations to improve the numerical convergence of the model. In this paper, we suggest a novel off-state breakdown criterion, based on monitoring the magnitude (at the drain edge of the gate) of the electric field component parallel to the current density. The new condition is shown to be consistent with more conventional definitions and to exhibit a significantly reduced sensitivity with respect to physical parameter variations.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 12 )