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Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS Technology

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7 Author(s)
Jau Lin ; Technol. Solutions Organ., Freescale Semicond. Inc., Tempe, AZ ; Kun-Hin To ; Brown, B. ; Hammock, D.
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paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10 GHz, while the reflection coefficient (|S11|, |S22|) < -10 dB. The design was targeted that |S22| variation within 2 dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14 GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process.

Published in:

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Date of Conference:

12-15 Oct. 2008