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Improved Drain-Source Current Model for HEMT's with Accurate Gm Fitting in All Regions

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2 Author(s)
Lin-Sheng Liu ; Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol., Chengdu ; Jian-Guo Ma

In this paper, we present an improved drain-source current (I-V) model for HEMT's which is simple and easy to extract, suitable for implementation in simulation tools. A single modeling equation is developed, allowing accurate prediction of both static and dynamic I-V characteristics. The model parameters can be extracted to match the measured data closely for a wide bias range without sacrificing accuracy. It is validated through DC as well as power measurements compared to simulations using GaAs HEMT transistors.

Published in:

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Date of Conference:

12-15 Oct. 2008