Referenced Items are not available for this document.
In this paper, we present an improved drain-source current (I-V) model for HEMT's which is simple and easy to extract, suitable for implementation in simulation tools. A single modeling equation is developed, allowing accurate prediction of both static and dynamic I-V characteristics. The model parameters can be extracted to match the measured data closely for a wide bias range without sacrificing accuracy. It is validated through DC as well as power measurements compared to simulations using GaAs HEMT transistors.
Published in:
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Date of Conference: 12-15 Oct. 2008
- Page(s):
- 1 - 4
- ISSN :
- 1550-8781
- E-ISBN :
- 978-1-4244-1940-1
- Print ISBN:
- 978-1-4244-1939-5
- INSPEC Accession Number:
- 10323612
- Conference Location :
- Monterey, CA
- Digital Object Identifier :
- 10.1109/CSICS.2008.27
- Product Type:
- Conference Publications
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