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Wideband mmWave CML static divider in 65nm SOI CMOS technology

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4 Author(s)
Daeik D. Kim ; IBM Semiconductor R&D Center, Hopewell Junction, NY, USA ; Choongyeun Cho ; Jonghae Kim ; Jean-Olivier Plouchart

A wideband millimeter-wave (mmWave) CML static divider fabricated in 65 nm SOI CMOS technology is presented. The mmWave system realization trend and engagement in sub-100 nm CMOS technologies are summarized. CML static dividerpsilas circuit analysis, sensitivity curve, and simulations are explored. The input-locking hysteresis and divider DC bias tuning are employed to extend the divider operation range. The divider performance measurements are presented with hysteresis-assisted gain and figure-of-merits. A scalable statistical estimation is proposed, and it is validated with a full 300 mm wafer measurements. The divider exhibits wideband mmWave performance to overcome the process variability in sub-100 nm CMOS processes.

Published in:

2008 IEEE Custom Integrated Circuits Conference

Date of Conference:

21-24 Sept. 2008