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A zero-IF 60GHz transceiver in 65nm CMOS with ≫ 3.5Gb/s links

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6 Author(s)
Tomkins, A. ; Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON ; Aroca, R.A. ; Yamamoto, T. ; Nicolson, S.T.
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This paper presents a 1.2 V 60 GHz zero-IF transceiver fabricated in a 65 nm CMOS process with a digital back-end. The chip includes a receiver with 14.7 dB gain, a low 5.6 dB noise figure, a 60 GHz LO distribution tree, a 64 GHz static frequency divider, and a direct BPSK modulator operating over the 55-65 GHz band at data rates exceeding 3.5 Gb/s. The chip consumes 374 mW (232 mW) from 1.2 V (1.0 V) and occupies 1.28 times 0.81 mm2. The transceiver was characterized over temperature up to 85degC and for power supplies down to 1 V. A manufacturability study of 60 GHz radio circuits is presented with measurements of transistors, the low-noise amplifier, and the receiver on typical and fast process splits. The transceiver performance is demonstrated using a 3.5 Gb/s 2-meter wireless transmit-receive link over the 55-64 GHz range.

Published in:

Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE

Date of Conference:

21-24 Sept. 2008