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Semiconductor quantum well structures based on InGaN/GaN materials are characterized by the piezoelectric and spontaneous polarizations. At high level of excitations, fields caused by the polarizations are screened by carriers confined in quantum wells. In our work, we consider additional effect in multiple-quantum wells caused by Coulomb interactions of carriers positioned in neighboring quantum wells. It is shown that inter-quantum-well Coulomb interactions effects on absorption/gain spectra. It is shown that the double-quantum-well InGaN/GaN structure is characterized by reducing of the optical gain due to inter-quantum-well Coulomb interactions.