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Summary form only given. Silicon carbide nanocrystal films have been synthesized by new original technique of direct ion deposition. Composition and structure of bonds between carbon and silicon atoms have been studied by means of photo-electron spectroscopy using XPS-800 Kratos spectrometer with MgK radiation. The spectra have been calibrated using data obtained for bond energies for reference SiC samples. The obtained films crystal structure has been studied by means of X-ray diffraction (DRON-2.0, CuK). The mean size of SiC nanocrystals was about 6-7 nm by Sherer formula estimation. The nonlinear refraction in nanocrystalline films of SiC has been studied by means of contemporary techniques. As a source of irradiation we used frequency doubled pulsed YAG:Nd laser. Experimentally have been shown that the nanocrystal films of SiC exhibit very high optical nonlinear response. Possible mechanisms of optical nonlinearity are discussed especially ones connected with the contribution of conducting electrons.