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Intracavity difference-frequency generation in GaAS/InGaAs/InGaP butt-joint diode lasers

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9 Author(s)
Aleshkin, V.Ya. ; Inst. for Phys. of Microstruct., Russian Acad. of Sci., Nizhny Novgorod ; Biryukov, A.A. ; Gavrilenko, V.I. ; Dubinov, A.A.
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The room-temperature intracavity difference-frequency generation in mid-infrared spectral range have been observed in a butt-joint GaAs/InGaAs/InGaP quantum-well laser diode which supports lasing at two closely spaced wavelengths in the near-infrared range. A special asymmetric waveguide design and a low-doped substrate that minimize mid infrared losses and realize phase matching condition for the difference-frequency generation process were used in butt-joint lasers.

Published in:

Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on

Date of Conference:

Sept. 29 2008-Oct. 4 2008