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Dependence of Photosensitive Effect on the Defects Created by DC Stress for LTPS TFTs

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3 Author(s)
Tai, Ya-Hsiang ; Dept. of Photonics & Display Inst., Nat. Chiao Tung Univ., Hsinchu ; Yan-Fu Kuo ; Yun-Hsiang Lee

In this letter, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after DC stress was investigated. It was discovered that the photo-generated carrier behaviors under optical illumination are related to defect types created by different stress conditions of hot-carrier effect and self-heating effect. These two types of defect creation result in the different photosensitivity behaviors of LTPS TFT. A model considering the relation between photosensitivity and defect is proposed to explain the anomalous illumination behaviors after device degradation.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 12 )

Date of Publication:

Dec. 2008

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