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Realization of High Voltage ( \gg \hbox {700} V) in New SOI Devices With a Compound Buried Layer

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10 Author(s)
Xiaorong Luo ; State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu ; Zhaoji Li ; Bo Zhang ; Daping Fu
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A novel silicon-on-insulator (SOI) high-voltage device with a compound buried layer (CBL SOI) consisting of two oxide layers and a polysilicon layer between them is proposed. Its breakdown characteristic is investigated theoretically and experimentally. Theoretically, its vertical breakdown voltage (BV) is shared by two oxide layers; furthermore, the electric field in the lower buried oxide layer of EI2 is increased from about 78 to 454 V/mum by holes collected on the bottom interface of the polysilicon. Both result in an enhanced BV. Experimentally, 762-V SOI diode is obtained. The maximal temperature of CBL SOI diode is reduced by 16.9 K because a window in the upper buried oxide layer alleviates the self-heating effect.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 12 )

Date of Publication:

Dec. 2008

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