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A transistor with an orthogonal gate (OG) electrode is proposed to improve dv/dt capability, reduce the gate-to-drain overlap capacitance (C gd), and improve figure of merit (FOM). The OG has both a horizontal section and a vertical section for MOS gate control. This 30-V device is implemented in a 0.18-mum CMOS-compatible process. Comparing to a conventional extended drain MOSFET transistor with the same voltage rating and device size, four times higher dv/dt capability and 53% improvement in FOM are observed.