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Improved RF Power Performance in a 0.18- \mu\hbox {m} MOSFET Which Uses an Asymmetric Drain Design

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5 Author(s)
Chang, T. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu ; Kao, H.L. ; McAlister, S.P. ; Horng, K.Y.
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We have fabricated 0.18-mum asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-mum MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 12 )