By Topic

Single-Wafer-Processed Self-Testable High- g Accelerometers With Both Sensing and Actuating Elements Integrated on Trench-Sidewall

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Xinxin Li ; State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Shanghai ; Lei Gu ; Yuelin Wang ; Heng Yang

A single-wafer-processed high-g piezoresistive accelerometer is reported. The microsensor has an in-plane self-caging cantilever configuration, in which an electrostatic self-testing function is integrated on-chip. Both the sensing piezoresistors and the self-test actuating electrodes are integrated on vertical sidewalls of the laterally deflecting cantilever. For single-wafer-based fabrication of the self-testable piezoresistive accelerometer, a trench-sidewall micromachining technology is developed, which is capable of integration of both boron-diffused piezoresistive sensors and electrostatic actuators on deep trench sidewalls. In addition, the technology can realize electrical continuity from the vertical trench-sidewall to the wafer surface. After design and fabrication of the accelerometers for a 200 000 g measure-range, characterization was performed to evaluate the developed trench-sidewall integration technology and to test the self-testable high-g accelerometers. A linear I-V relationship for the sidewall-diffused piezoresistor is measured with satisfactory sidewall-to-surface electric-transfer properties. The electrical isolation between adjacent elements on the sidewall shows a breakthrough voltage of about 55 V. Moreover, with the single-chip integrated lateral-actuating structure, both static and dynamic self-testing functions are realized. The measurement of the accelerometer results in a sensitivity of about 1 muV/g/3.3 V, noise-limited vibration resolution of about 1 g and zero-point temperature drift of lower than 100 ppm/degC.

Published in:

Sensors Journal, IEEE  (Volume:8 ,  Issue: 12 )