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Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.
Published in:
Electron Devices, IEEE Transactions on
(Volume:55
,
Issue:
11
)
Date of Publication: Nov. 2008
- Page(s):
- 3107 - 3118
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 10311758
- Digital Object Identifier :
- 10.1109/TED.2008.2005154
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 November 2008
- Issue Date :
- Nov. 2008
- Sponsored by :
- IEEE Electron Devices Society
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