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Germanium Antimonide Phase-Change Nanowires for Memory Applications

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6 Author(s)
Xuhui Sun ; NASA Ames Res. Center, Moffett Field, CA ; Bin Yu ; Garrick Ng ; M. Meyyappan
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GeSb nanowires (NWs) have been grown using a vapor-liquid-solid approach for the fabrication of electrically operated phase-change random access memory device. The NWs are 40-100 nm in diameter and have approximately 90% Sb for fast crystallization. Memory devices show an on/off resistance ratio of 104, reset programming current of 0.7 mA, and set programming current of 60 nA.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 11 )