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Electrical Characteristics and Thermal Stability of  \hbox {Hf}_{x}\hbox {Ta}_{y}\hbox {Si}_{z}\hbox {N} Metal Gate Electrode for Advanced MOS Devices

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8 Author(s)
Chang-Ta Yang ; Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu ; Kuei-Shu Chang-Liao ; Hsin-Chun Chang ; Chung-Hao Fu
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To continuously improve device performance with the shrinkage of device dimension, some novel devices like fully depleted silicon-on-insulator and symmetric double-gate transistor have been proposed. Various HfxTaySizN metal gate electrodes were developed in this paper to achieve work function near the midgap and excellent thermal stability. Furthermore, this paper also demonstrated a good metal gate candidate, Hf0.19Ta0.41Si0.26N0.14, possessing excellent electrical performances in hysteresis effect, interface trap density, stress-induced leakage current, and excellent thermal stability as well.

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Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 11 )