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ZnO Nanowire Field-Effect Transistors

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2 Author(s)
Chang, Pai-Chun ; Dept. of Phys. & Astron., Univ. of Southern California, Los Angeles, CA ; Lu, J.G.

Owing to the extraordinary properties and prominent applications in emerging nanoelectronics, ZnO nanowire has attracted tremendous research effort. This paper provides an introductory overview, covering topics ranging from basic nanowire synthesis and fundamental electrical properties to device characteristics based on field-effect transistor configuration.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 11 )