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Device Characteristics of AlGaN/GaN MOS-HEMTs Using High- k Praseodymium Oxide Layer

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6 Author(s)
Chiu, Hsien-Chin ; Dept. of Electron. Eng., Chang Gung Univ., Taoyuan ; Chih-Wei Yang ; Yung-Hsiang Lin ; Lin, Ray-Ming
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In this brief, AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using an electron-beam-evaporated praseodymium oxide layer (Pr2O3) in a high-oxygen-flow environment during the gate-dielectric-layer formation was studied. By adjusting the oxygen flow rate in an electron-beam evaporator chamber, the highest Pr content in Pr2O3 occurred at 15 sccm. Moreover, the Pr2O3 thin film also achieved a good thermal stability after 400-degC, 600-degC, and 800-degC postdeposition annealing due to its high-binding-energy (933.2 eV) characteristics. The gate leakage current can be improved significantly by inserting this high- k dielectric layer, and meanwhile, the power-added efficiency can be enhanced up to 5%. Experimental results have also shown that Pr2O3 MOS-HEMTs outperformed the standard GaN HEMTs in output power density and in pulsed-mode operation. These high-performance electron-beam-evaporated Pr2O3 high-k AlGaN/GaN MOS-HEMTs are suitable for high-volume production due to its in situ insulator and metal-gate deposition in the same chamber.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 11 )

Date of Publication:

Nov. 2008

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