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Development of a Vertical Wrap-Gated InAs FET

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10 Author(s)
Thelander, C. ; Solid State Phys., Lund Univ., Lund ; Rehnstedt, C. ; Froberg, L.E. ; Lind, E.
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In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control, in situ doping, high- kappa dielectric deposition, spacer layer formation, and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.

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Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 11 )