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Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

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14 Author(s)
Flora M. Li ; Electr. Eng. Div., Univ. of Cambridge, Cambridge ; Gen-Wen Hsieh ; Sharvari Dalal ; Marcus C. Newton
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This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2 V-1s-1, representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs.

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IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 11 )