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Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance

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3 Author(s)
K. R. Kim ; (Center for Integrated Systems (CIS), Stanford University, Stanford, CA 94305, USA)E-mail: ; B. -G. Park ; R. W. Dutton

The low resistive band-to-band tunnelling (BTBT) model has been developed for radio-frequency (RF) silicon negative differential resistance (NDR) device simulation on the TCAD platform. The BTBT mechanism in a forward-biased tunnel junction is modelled based on a generation-recombination term in a continuity equation by considering a spatially varying electric field through the tunnelling distance. Using this model, DC/AC characteristics of silicon NDR devices have been successfully described on a numerical device simulation platform. The calculated speed index from the junction capacitance and peak tunnelling current of the tunnel diode shows good agreement with experiments.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 23 )