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High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate

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6 Author(s)
Arai, M. ; NTT Photonics Labs., NTT Corp., Atsugi ; Fujisawa, T. ; Kobayashi, W. ; Nakashima, K.
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A 1.26 m ridge waveguide laser diode with an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapour-phase epitaxy has been successfully developed. This laser has achieved the highest operating temperature (173degC) for continuous-wave operation reported for a metamorphic laser.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 23 )

Date of Publication:

November 6 2008

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