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Browse Journals & Magazines > Electronics Letters ...> Volume:44 Issue:23 Help

High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate

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6 Author(s)
Arai, M. ; NTT Photonics Labs., NTT Corp., Atsugi ; Fujisawa, T. ; Kobayashi, W. ; Nakashima, K.
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A 1.26 m ridge waveguide laser diode with an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapour-phase epitaxy has been successfully developed. This laser has achieved the highest operating temperature (173degC) for continuous-wave operation reported for a metamorphic laser.

Published in:
Electronics Letters  (Volume:44 ,  Issue: 23 )

Date of Publication: November 6 2008

Page(s):
1359 - 1360
ISSN :
0013-5194
INSPEC Accession Number:
10311421
Digital Object Identifier :
10.1049/el:20082657
Product Type:
Journals & Magazines
Date of Current Version :
07 November 2008
Issue Date :
November 6 2008
Sponsored by :
Institution of Engineering and Technology

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