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8mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application

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8 Author(s)
H. -S. Jhon ; (Department of Electrical and Computer Science Engineering,Seoul National University, Gwanak-gu, Seoul 151-742, Korea) E-mail: ; I. Song ; J. Jeon ; H. Jung
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A 17/24 GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is presented. The proposed LNA employs a positive feedback transmission-line-based LC-ladder network to obtain dual-band operation and reduce power consumption. For low cost, the LNA has been fabricated using a 0.18 mum mixed-signal CMOS process. The implemented LNA shows gains of 9.2 and 12 dB, and noise figures (NF) of 5.7 and 6.4 dB at 18 and 24.5 GHz, respectively. The proposed LNA exhibits 8 mW power consumption from a 0.8 V supply and the active chip area, including pad, is about 720 times 460 mum2.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 23 )